ماسفت IRFP250 پکیج TO-247

IRFP250 MOSFET

Type Designator: IRFP250

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 33 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 140 nC

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: TO247

IRFP250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search